Autor: |
Krämer, M.C.J.C.M., Karouta, F., Kwaspen, J.J.M., Rudzinski, M., Larsen, P.K., Suijker, E.M., Hek, P.A. de, Rödle, T., Volokhine, I., Kaufmann, L.M.F. |
Přispěvatelé: |
TNO Defensie en Veiligheid |
Jazyk: |
angličtina |
Rok vydání: |
2008 |
Předmět: |
|
Zdroj: |
Meeting Abstracts of the 214th ECS (Electro Chemical Society) Meeting-October 12-17, 2008, Honolulu, HI, paper 2078 |
Popis: |
A high electrical breakdown field combined with a high electron saturation velocity make GaN very attractive for high power high frequency electronics. The maximum drain current densities of AlGaN/GaN HFETs range from 1.0 A/mm to 1.5 A/mm [1-3]. Hence, it is obvious that breakdown voltages over 160 V are required to achieve record output power densities larger than 30 W/mm [3] for class A operation. Maximum RF output power of GaN based HEMTs is significantly less than what can be estimated from its DC characteristics, the so-called DC to RF dispersion [4]. This gate lag effect and a good passivation of the AlGaN surface under the gate contact are key elements in achieving high power HEMTs. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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