Hole mobility of cylindrical GaSb nanowires
| Autor: | García Ruiz, Francisco Javier, González Marín, Enrique, Martínez Blanque, Celso Jesús, Tienda Luna, Isabel María, González-Medina, Jose María, Toral López, Alejandro, Donetti, Luca, Godoy Medina, Andrés |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: | |
| Zdroj: | Digibug. Repositorio Institucional de la Universidad de Granada instname |
| Popis: | The hole mobility of GaSb field-effect transistor nanowires is analyzed as a function of the device orientation and gate bias. To this purpose, a self-consistent Poisson-Schrödinger solver with an 88 k·p Hamiltonian is employed to study the electrostatics, and the hole mobility is calculated under the momentum relaxation time solution of the Boltzmann transport equation including the main high-field scattering mechanisms. The authors acknowledge the support by the Spanish Government under the Project TEC2014-59730-R. |
| Databáze: | OpenAIRE |
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