Out-of-Plane and Inline RF Switches based on Ge2Sb2Te5 Phase-Change Material
Autor: | Crunteanu, Aurelian, Mennai, Amine, Guines, Cyril, Passerieux, Damien, Blondy, Pierre |
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Přispěvatelé: | MINACOM (XLIM-MINACOM), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS) |
Jazyk: | angličtina |
Rok vydání: | 2014 |
Předmět: | |
Zdroj: | IEEE-MTT International Microwave Symposium Digest International Microwave Symposium 2014, IEEE-MTT International Microwave Symposium 2014, IEEE-MTT, Mar 2014, Tampa Bay, FL, United States. paper TU4A-2 |
Popis: | International audience; We present the fabrication and characterization of novel RF switches based on Ge2Sb2Te5 (GST) phase change material. Such ohmic devices show non-volatile switching with resistivity changes up to 105 as the material is transforming between the amorphous and the crystalline state by either applying a voltage pulse or direct heating. We investigated the RF properties and power handling of such devices in two configurations: out-of-plane (GST material between two electrodes) and inline switches. For a directly heated 10-mu length inline switch we measured an on-state resistance of 7 Ohm, and an off-state capacitance and resistance of 13.7 fF and 6.47 MOhm, respectively, resulting in a cut-off frequency of ~1.6 THz. |
Databáze: | OpenAIRE |
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