| Autor: |
TUPPEN, C, GIBBINGS, C, HOCKLY, M, ROBERTS, S |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Popis: |
The density of misfit dislocation sources in strained Si 1-xGex layers grown on Si substrates is rarely sufficient to explain the observed extent of relaxation when layer thicknesses are in excess of the metastable critical thickness. This letter describes a process whereby a small, but finite number of misfit dislocation nucleation sources can lead to extensive strain relaxation across a complete wafer. Two novel mechanisms for misfit dislocation multiplication are presented and shown to be compatible with microscopic observations of chemically etched layers. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
