N-TYPE SIGE HETEROSTRUCTURES FOR THZ INTERSUBBAND TRANSITIONS
| Autor: | Seta, M., Capellini, G., Ciasca, G., Busby, Y., Evangelisti, F., Nicotra, G., Nardone, M., Ortolani, M., MICHELE VIRGILIO, Grosso, G., Nucara, A., Calvani, P. |
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| Přispěvatelé: | M., DE SETA, Capellini, Giovanni, G., Ciasca, Y., Busby, F., Evangelisti, G., Nicotra, M., Nardone, M., Ortolani, M., Virgilio, G., Grosso, A., Nucara, AND P., Calvani, DE SETA, Monica, Capellini, G., Ciasca, G., Busby, Y., Evangelisti, F., Nicotra, G., Nardone, M., Ortolani, M., Virgilio, M., Grosso, G., Nucara, A., Calvani, P. |
| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Zdroj: | Scopus-Elsevier Web of Science Giuseppe Nicotra Sapienza Università di Roma-IRIS |
| Popis: | Research on band-gap engineering of Silicon-Germanium heterostructures for the realization of Quantum Cascade (QC) structures emitting in the Terahertz (THz) spectral region has recently attracted a vast interest. While several successful attempts have been reported using hole-based (p-type) intersubband transitions, very few results have been published on systems exploiting electrons (n-type). In this work we present the optical and structural characterization of n-type heterostructures made either of tensely-strained Si (sSi) quantum well (QW) confined between low Ge content Si1-xGex barriers [0.2 |
| Databáze: | OpenAIRE |
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