Non-linear Raman shift-stress behavior in top-down fabricated highly strained silicon nanowires

Autor: Spejo, Lucas Barroso, 1994, Arrieta Concha, José Luis, 1981, Santos, Marcos Vinicius Puydinger dos, 1987, Barros, Angélica Denardi de, 1982, Diniz, José Alexandre, 1964
Přispěvatelé: UNIVERSIDADE ESTADUAL DE CAMPINAS
Rok vydání: 2020
Předmět:
Zdroj: Repositório da Produção Científica e Intelectual da Unicamp
Universidade Estadual de Campinas (UNICAMP)
instacron:UNICAMP
Repositório Institucional da Unicamp
Popis: Agradecimentos: The authors thank the Center of Semiconductors Components and Nanotechnologies (CCS Nano) from the University of Campinas (UNICAMP) for clean room facilities, the Carbon Sci Tech Labs of UNICAMP for the Raman spectrometer, as well as Professor Thiago Alegre and Professor Gustavo Wiederhecker for the experimental support by providing the power meter. This work was financially supported by the Brazilian Funding Agencies Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP—Grant No. 2018/02598-4), Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (Capes, Grant No. 1391856), and Conselho Nacional de Desenvolvimento Científico e Tecnológico, CNPq Abstract: Strain engineering is a key technology to continue Moore's law with silicon or any other foreseen semiconductor in very large scale integration. The characterization of strain in nanostructures is important to determine the potential of these technologies, and it is typically performed using micro-Raman when investigating strained silicon. Here, we report on the Raman shift-stress behavior from the (001) silicon surface of highly strained ultra-thin (15nm-thick) suspended nanowires with stresses in the range of 0-6.3GPa along the [110] direction. We employ a strain technology that offers a precise control of stress values at large sampling while reducing variability. The stress level of the nanostructures has been accurately evaluated by the finite element method simulations and further correlated to the Raman spectra. For stresses below 4.5GPa, the aforementioned behavior was linear and the extracted stress shift coefficient was in agreement with those reported in the literature. For stresses greater than 4.5GPa, we show that the Raman shift-stress behavior resembles a quadratic function Resumo: FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPES CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ Aberto
Databáze: OpenAIRE
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