Implications of Small Geometry Effects on gm/ID Based Design Methodology for Analog Circuits
| Autor: | OU, jack, Maris Ferreira, Pietro |
|---|---|
| Přispěvatelé: | California State University [Northridge] (CSUN), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), California State University, Northridge ( CSUN ), Laboratoire Génie électrique et électronique de Paris ( GeePs ), Centre National de la Recherche Scientifique ( CNRS ) -CentraleSupélec-Université Pierre et Marie Curie - Paris 6 ( UPMC ) -Université Paris-Sud - Paris 11 ( UP11 ) |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Hardware_INTEGRATEDCIRCUITS
[ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Hardware_PERFORMANCEANDRELIABILITY [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ComputingMilieux_MISCELLANEOUS [ SPI.TRON ] Engineering Sciences [physics]/Electronics [SPI.TRON]Engineering Sciences [physics]/Electronics |
| Zdroj: | IEEE Transactions on Circuits and Systems II: Express Briefs IEEE Transactions on Circuits and Systems II: Express Briefs, Institute of Electrical and Electronics Engineers, 2018, ⟨10.1109/TCSII.2018.2846484⟩ IEEE Transactions on Circuits and Systems. Part II, Express Briefs IEEE Transactions on Circuits and Systems. Part II, Express Briefs, IEEE, 2018 |
| ISSN: | 1549-7747 1558-3791 |
| DOI: | 10.1109/TCSII.2018.2846484⟩ |
| Popis: | International audience; Small geometry effects have become increasingly important in analog circuits as transistors continue to shrink. As a result, transconductance-to-drain current (gm/ID) transistor parameters are no longer width-independent. In this brief, a procedure to develop “unit-sized” transistors with minimal sensitivity to small geometry effects is proposed. It is shown that by using the “unit-sized” transistors, the impact of small geometry effects on gm/ID dependent parameters such as current density and self gain can be reduced to 3.6 percent and 1.5 percent respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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