Monte Carlo calculation of In0.53Ga0.47As and InAs noise parameters
| Autor: | Karishy, Slyman, Palermo, Christophe, Sabatini, Giulio, Marinchio, Hugues, Varani, Luca, Mateos López, Javier, González Sánchez, Tomás |
|---|---|
| Přispěvatelé: | Université Libanaise, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Departamento de Fisica Aplicada, Universidad de Salamanca, Universidad de Salamanca |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: | |
| Zdroj: | 2017 International Conference on Noise and Fluctuations (ICNF) 2017 International Conference on Noise and Fluctuations (ICNF), Jun 2017, Vilnius, Lithuania. pp.1-4, ⟨10.1109/ICNF.2017.7985941⟩ GREDOS. Repositorio Institucional de la Universidad de Salamanca instname |
| DOI: | 10.1109/ICNF.2017.7985941⟩ |
| Popis: | [EN]The increase of modern electronics performances depends on the ability to grow high-frequency, low-noise and low-power devices. Nowadays, InP technology is mature and In0.53Ga0.47As is clearly a material of interest. Moreover, Sb-based devices constitute the next step [1], which makes InAs transport and noise parameters analysis a relevant topic. The difficulties to obtain these quantities through experiments can be overcome by the onset of an appropriate numerical protocol. In this framework, we propose a Monte Carlo calculation of both diffusion coefficient and noise temperature of bulk In0.53Ga0.47As and InAs within a correlation functions formalism. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|