| Autor: |
Kim, KK, Niki, S, Oh, JY, Song, JO, Seong, TY, Park, SJ, Fujita, S, Kim, SW |
| Jazyk: |
angličtina |
| Rok vydání: |
2005 |
| Zdroj: |
JOURNAL OF APPLIED PHYSICS. 97(6) |
| ISSN: |
0021-8979 |
| Popis: |
We report on the growth of very high-quality Al-doped n-type ZnO epilayers on sapphire substrates using a radio-frequency (rf) magnetron sputtering technique combined with a rapid-thermal annealing.Photoluminescence(PL) and Hall measurements show that both the optical and electrical properties of the ZnO layers are significantly improved with an increasing annealing temperature up to 900 °C. For example, the samples that are grown at 600 °C and a rf power of 100 W with an Ar/O2 gas ratio of 1 give an electron concentration of 1.83×10[20]cm3 and a mobility of 65.6cm2/Vs, when annealed at 900 °C for 3 min in a nitrogen ambient. Furthermore, x-ray diffraction measurements show that both the as-grown and annealed samples are of excellent crystallinity. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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