Autor: |
Oxland, R., Li, X., Chang, S.W., Wang, T., Vasen, P., Ramvall, R., Contreras-Guerrero, R., Rojas-Ramirez, J., Holland, M., Doornobos, G., Chang, Y.S., Macintyre, D.S., Thoms, S., Droopad, R., Yeo, Y.-C., Diaz, C.H., Thayne, I.G., Passlack, M. |
Jazyk: |
angličtina |
Rok vydání: |
2016 |
ISSN: |
0741-3106 |
Popis: |
We report the first demonstration of InAs FinFETs with fin width Wfin in the range 25–35 nm, formed by inductively coupled plasma etching. The channel comprises defect-free, lattice-matched InAs with fin height Hfin = 20 nm controlled by the use of an etch stop layer incorporated into the device heterostructure. For a gate length Lg = 1 nm, peak transconductance gm,peak = 1430 µS/µm is measured at Vd = 0.5 V demonstrating that electron transport in InAs fins can match planar devices. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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