InAs FinFETs with Hfin = 20 nm fabricated using a top-down etch process

Autor: Oxland, R., Li, X., Chang, S.W., Wang, T., Vasen, P., Ramvall, R., Contreras-Guerrero, R., Rojas-Ramirez, J., Holland, M., Doornobos, G., Chang, Y.S., Macintyre, D.S., Thoms, S., Droopad, R., Yeo, Y.-C., Diaz, C.H., Thayne, I.G., Passlack, M.
Jazyk: angličtina
Rok vydání: 2016
ISSN: 0741-3106
Popis: We report the first demonstration of InAs FinFETs with fin width Wfin in the range 25–35 nm, formed by inductively coupled plasma etching. The channel comprises defect-free, lattice-matched InAs with fin height Hfin = 20 nm controlled by the use of an etch stop layer incorporated into the device heterostructure. For a gate length Lg = 1 nm, peak transconductance gm,peak = 1430 µS/µm is measured at Vd = 0.5 V demonstrating that electron transport in InAs fins can match planar devices.
Databáze: OpenAIRE