Partial hybridisation of electron-hole states in an InAs/GaSb double quantum well heterostructure

Autor: Knox, CS, Morrison, C, Herling, F, Ritchie, DA, Newell, O, Myronov, M, Linfield, EH, Marrows, CH
Jazyk: angličtina
Rok vydání: 2017
Předmět:
ISSN: 0268-1242
Popis: InAs/GaSb coupled quantum well heterostructures are important semiconductor systems with applications ranging from spintronics to photonics. Most recently, InAs/GaSb heterostructures have been identified as candidate two-dimensional topological insulators, predicted to exhibit helical edge conduction via fully spin-polarised carriers. We study an InAs/GaSb double quantum well heterostructure with an AlSb barrier to decouple partially the 2D electrons and holes, and find conduction consistent with a 2D hole gas, with an effective mass of 0.235 ± 0.005 m 0, existing simultaneously with hybridised carriers with an effective mass of 0.070 ± 0.005 m 0, where m 0 is the bare electron mass.
Databáze: OpenAIRE