| Autor: |
Navarro, Carlos, Lacord, Joris, Parihar, Mukta Singh, Adamu-Lema, Fikru, Duan, Meng, Rodriguez, Noel, Cheng, Binjie, El Dirani, Hassan, Barbe, Jean-Charles, Fonteneau, Pascal, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Wells, Paul, Kim, Yong-Tae, Asenov, Asen, Cristoloveanu, Sorin, Gamiz, Francisco |
| Jazyk: |
angličtina |
| Rok vydání: |
2017 |
| Předmět: |
|
| ISSN: |
0018-9383 |
| Popis: |
The Z²-FET operation as capacitorless DRAM\ud is analyzed using advanced 2-D TCAD simulations for IoT\ud applications. The simulated architecture is built based on\ud actual 28-nm fully depleted silicon-on-insulatordevices. It is\ud found that the triggering mechanism is dominated by the\ud front-gate bias and the carrier’s diffusion length. As in other\ud FB-DRAMs, the memory window is defined by the ON voltage\ud shift with the stored body charge. However, the Z²-FET’s\ud memory state is not exclusively defined by the inner charge\ud but also by the reading conditions. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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