Autor: |
Di Paola, D.M., Velichko, Anton V., Bomers, Mario, Balakrishnan, Nilanthy, Makarovsky, Oleg, Capizzi, Mario, Cerutti, Laurent, Baranov, Alexei N., Kesaria, M., Krier, A., Taliercio, Thierry |
Jazyk: |
angličtina |
Rok vydání: |
2018 |
Předmět: |
|
ISSN: |
2195-1071 |
Popis: |
Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid-infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Post-growth hydrogenation of In(AsN) creates a highly conducting channel near the surface and a surface plasmon polariton detected by attenuated total reflection techniques. The suppression of plasmonic effects following a photo-annealing of the semiconductor is attributed to the dissociation of the N-H bond. This offers new routes for direct patterning of MIR plasmonic structures by laser writing. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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