| Autor: |
Cao, Y., Osman, T., Clarke, E., Patil, P.K., Ng, J.S., Tan, C.H. |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| ISSN: |
0733-8724 |
| Popis: |
Avalanche photodiodes (APDs) made with the material AlGaAsSb (lattice-matched to InP) exhibit very low excess noise characteristics. We demonstrate a Separate Absorption and Multiplication APD (SAM-APD) incorporating a GaAs0.52Sb0.48 (GaAsSb) absorption region and an Al0.85Ga0.15As0.56Sb0.44 (AlGaAsSb) avalanche region. Our GaAsSb/AlGaAsSb SAM-APD exhibits a cut-off wavelength of 1.70 m at room temperature and a responsivity of 0.39 A/W at 1.55 m wavelength (with no antireflection coating). Temperature dependence of the breakdown voltage was obtained from avalanche gain data from multiple devices operated at 77 to 295 K. This produced a temperature coefficient of breakdown voltage of 4.310.33 mV/K, a factor of 10 and 5 smaller than values for comparable InP and InAlAs SAM-APDs. The very small temperature coefficient of this work is consistent with the extremely weak temperature dependence of avalanche breakdown previously observed in AlGaAsSb diodes. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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