| Autor: |
Qiao, L., Cheong, J.S., Ong, J.S.L., Ng, J.S., Krysa, A.B., Green, J.E., David, J.P.R. |
| Jazyk: |
angličtina |
| Rok vydání: |
2015 |
| ISSN: |
1041-1135 |
| Popis: |
Multiplication and avalanche excess noise measurements have been undertaken on a series of AlInP homojunction p-i-n and n-i-p diodes with i region widths ranging from 0.04 to 0.89 μm, using 442 and 460 nm wavelength light. Low dark currents of 1000 kV/cm. For a given multiplication factor, the excess noise decreased as the avalanche width decreased due to the dead-space effect. Using 460 nm wavelength light, measurements showed that a separate absorption multiplication avalanche photodiode with a nominal multiplication region width of 0.2 μm had an effective k (hole to electron ionization coefficient ratio) of ~0.3. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
