Ni2Si/4H-SiC Schottky photodiodes for ultraviolet light detection
| Autor: | M. Mazzillo 1, A. Sciuto 2, F. Roccaforte 2, C. Bongiorno 2, R. Modica 1, S. Marchese 1, P. Badala 1, D. Cali 1., F. Patane 1, B. Carbone 1, A. Russo 1, S. Coffa 1 |
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| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: | |
| Zdroj: | Materials science forum 858 (2016): 1015–1018. doi:10.4028/www.scientific.net/MSF.858.1015 info:cnr-pdr/source/autori:M. Mazzillo 1; A. Sciuto 2; F. Roccaforte 2; C. Bongiorno 2; R. Modica 1; S. Marchese 1; P. Badala 1; D. Cali 1.; F. Patane 1; B. Carbone 1; A. Russo 1; S. Coffa 1/titolo:Ni2Si%2F4H-SiC Schottky photodiodes for ultraviolet light detection/doi:10.4028%2Fwww.scientific.net%2FMSF.858.1015/rivista:Materials science forum/anno:2016/pagina_da:1015/pagina_a:1018/intervallo_pagine:1015–1018/volume:858 |
| DOI: | 10.4028/www.scientific.net/MSF.858.1015 |
| Popis: | Ultraviolet (UV) monitoring is of great interest in the healthcare field to prevent excessive UV exposure risks. In the last years silicon carbide (SiC) has emerged as a suitable material for the fabrication of UV detectors. In this paper we propose a 4H-SiC Schottky photodiode with a continuous very thin Ni2Si layer operating at 0V, properly designed for UV radiation monitoring. |
| Databáze: | OpenAIRE |
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