Impact of phosphorus implantation on the electrical properties of SiO2/4H-SiC interfaces annealed in N2O
| Autor: | P. Fiorenza 1, S. Di Franco 1, F. Giannazzo 1, S. Rascuna 2, M. Saggio 2, F. Roccaforte 1 |
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| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: | |
| Zdroj: | Materials science forum 858 (2016): 701–704. doi:10.4028/www.scientific.net/MSF.858.701 info:cnr-pdr/source/autori:P. Fiorenza 1; S. Di Franco 1; F. Giannazzo 1; S. Rascuna 2; M. Saggio 2; F. Roccaforte 1/titolo:Impact of phosphorus implantation on the electrical properties of SiO2%2F4H-SiC interfaces annealed in N2O/doi:10.4028%2Fwww.scientific.net%2FMSF.858.701/rivista:Materials science forum/anno:2016/pagina_da:701/pagina_a:704/intervallo_pagine:701–704/volume:858 |
| DOI: | 10.4028/www.scientific.net/MSF.858.701 |
| Popis: | In this work, the combined effect of a shallow phosphorus (P) pre-implantation and of a nitridation annealing in N2O on the properties of the SiO2/4H-SiC interface has been investigated. The peak carrier concentration and depth extension of the electrically active dopants introduced by the nitridation and by the combination of P pre-implantation and nitridation were determined by high resolution scanning capacitance microscopy (SCM). Macroscopic capacitance-voltage (C-V) measurements on metal oxide semiconductor (MOS) capacitors and nanoscale C-V analyses by SCM allowed to quantify the electrical effect of the donors introduced underneath the SiO2/4H-SiC interface. Phosphorous pre-implantation and subsequent high temperature electrical activation has been shown not only to produce an increased doping in the 4H-SiC surface region but also a better homogeneity of surface potential with respect to the use of N2O annealing only. |
| Databáze: | OpenAIRE |
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