Homodyne mixing at 150 GHz in a high electron mobility transistor
| Autor: | M. Ortolani (a), A. Di Gaspare (a), E. Giovine (a), F. Evangelisti (a), A. Dori (b), E. Giovenale (b), G. P. Gallerano (b), A. Cetronio (c), C. Lanzieri (c), M. Peroni (c), V. Foglietti (a) |
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| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Zdroj: | IRMMW-THz 2008, pp. 462–463, Pasadena, California,USA, SEP 15-19, 2008 info:cnr-pdr/source/autori:M. Ortolani (a), A. Di Gaspare (a), E. Giovine (a), F. Evangelisti (a), A. Dori (b), E. Giovenale (b), G. P. Gallerano (b), A. Cetronio (c), C. Lanzieri (c), M. Peroni (c) and V. Foglietti (a)/congresso_nome:IRMMW-THz 2008/congresso_luogo:Pasadena, California,USA/congresso_data:SEP 15-19, 2008/anno:2008/pagina_da:462/pagina_a:463/intervallo_pagine:462–463 |
| Popis: | We explore the possibility of using an AlGaN/GaN high electron mobility transistor (HEMT) as a free-space coupled homodyne mixer. We used 150 GHz radiation from a Free Electron Laser, hence 5 times higher than the HEMT nominal band center at 30 GHz. The homodyne mixing provides a quasidc output signal, which makes the HEMT a detector of the radiation at 150 GHz. |
| Databáze: | OpenAIRE |
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