Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions
| Autor: | Condorelli G., Mauceri M., Pistone G., Perdicaro L.M.S., Abbondanza G., Portuese F., Valente G.L., Crippa D., Giannazzo F., La Via F. |
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| Rok vydání: | 2009 |
| Zdroj: | Materials science forum 600-603 (2009): 127–130. info:cnr-pdr/source/autori:Condorelli G., Mauceri M., Pistone G., Perdicaro L.M.S., Abbondanza G., Portuese F., Valente G.L., Crippa D., Giannazzo F., La Via F./titolo:Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions/doi:/rivista:Materials science forum/anno:2009/pagina_da:127/pagina_a:130/intervallo_pagine:127–130/volume:600-603 |
| Popis: | A process has been developed to grow multi-epy high doped structure. Trichlorosilane (TCS) and Ethylene have been used as precursor; Nitrogen (N 2) and trimethylaluminum (TMA) as doping source. The SIMS and SCM analysis show that using this silicon precursor very abrupt N ++/P+/N+ junctions (40-60 nm) can be obtained with low background doping concentration in a single epitaxial growth run. © (2009) Trans Tech Publications, Switzerland. |
| Databáze: | OpenAIRE |
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