Investigation of InxGa1-xN multi-quantum wells for energy efficiency light emitting diode

Autor:	S. Abdullayeva, G. Gahramanova, C. Frigeri, N. Musayeva, R. Jabbarov
Jazyk:	angličtina
Rok vydání:	2017
Předmět:	LED × InGaN/GaN × Photoluminescence × TEM
Zdroj:	International Scientific Conference on Sustainable Development Goals-2017, pp. 391–395, Baku (AZ), 23-24/11/2017 info:cnr-pdr/source/autori:S. Abdullayeva, G. Gahramanova, C. Frigeri, N. Musayeva, R. Jabbarov/congresso_nome:International Scientific Conference on Sustainable Development Goals-2017/congresso_luogo:Baku (AZ)/congresso_data:23-24%2F11%2F2017/anno:2017/pagina_da:391/pagina_a:395/intervallo_pagine:391–395
Popis:	The work demonstrates the achievement of high intensity and stable photoluminescence of InGaN QWs which are the active parts of GaN based semipolar LEDs
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=cnr_________::4095395b65eb87609e699c07237eabdf http://www.cnr.it/prodotto/i/400284 Zobrazit plný text záznamu