Investigation of InxGa1-xN multi-quantum wells for energy efficiency light emitting diode
Autor: | S. Abdullayeva, G. Gahramanova, C. Frigeri, N. Musayeva, R. Jabbarov |
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Jazyk: | angličtina |
Rok vydání: | 2017 |
Předmět: | |
Zdroj: | International Scientific Conference on Sustainable Development Goals-2017, pp. 391–395, Baku (AZ), 23-24/11/2017 info:cnr-pdr/source/autori:S. Abdullayeva, G. Gahramanova, C. Frigeri, N. Musayeva, R. Jabbarov/congresso_nome:International Scientific Conference on Sustainable Development Goals-2017/congresso_luogo:Baku (AZ)/congresso_data:23-24%2F11%2F2017/anno:2017/pagina_da:391/pagina_a:395/intervallo_pagine:391–395 |
Popis: | The work demonstrates the achievement of high intensity and stable photoluminescence of InGaN QWs which are the active parts of GaN based semipolar LEDs |
Databáze: | OpenAIRE |
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