Field-effect Transistor Devices Based on Strained Si Channels Above Buried 2D Periodic SiGe Quantum Dots
| Autor: | Hrauda, Nina, Etzelstorfer, Tanja, Strangl, Julian, Carbone, Dina, Bauer, Guenther, Biasotto, Cleber, Jovanović, Vladimir, Nanver, Lis, Moers, Juergen, Gruetzmacher, Detlev |
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| Jazyk: | angličtina |
| Rok vydání: | 2010 |
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| Popis: | Field-effect transistors are fabricated in the Si channels grown over the self-assembled SiGe dots. Si channels are under the biaxial strain which increases electron mobility resulting in higher drain currents. |
| Databáze: | OpenAIRE |
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