| Popis: |
Molecular beam epitaxy (MBE)-grown bulk and short-period superlattices of (Al, Ga, In)As epilayers lattice matched to InP were characterized by double-crystal diffractometry and low-temperature photoluminescence. A reflection spectroscopy technique was used to determine the refractive index of (Al, Ga, In)As films as a function of wavelength. The measured data were fitted to a single- oscillator dispersion model, and the model coefficients are given. The resulting expression can be used in the design of waveguides, modulators, and other optical devices. |
