| Autor: |
Šverko, Mladen, Linić, Antonio, Gradišnik, Vera |
| Přispěvatelé: |
Bratina, G., Šorli, Iztok |
| Jazyk: |
angličtina |
| Rok vydání: |
2011 |
| Předmět: |
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| Popis: |
The a-Si:H p-i-n solar cells parameter extraction with four- and five-points methods has been carried out. The best value of series and parasitic shunt resistances can be extracted from four-point measurements with position of bias point corresponding to pVoc and pJsc. The resulting parameters’ values, obtained by four- point method, do better curve fitting to sun illuminated measured I-V solar cell characteristic than by five-point method. The described four point analytical method, as simplest method for solar cells parameters extraction, could be used in solar cells characterization and development of photovoltaic photodiode circuits with the low power source for low reverse bias and pulsed voltage driven a-Si:H p-i-n photodiode as image sensor. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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