Aluminum nitride for thin film bulk acoustic wave resonators

Autor:	Nurmela, Arto, Riekkinen, Tommi, Pensala, Tuomas, Molarius, Jyrki, Ylilammi, Markku
Jazyk:	angličtina
Rok vydání:	2007
Předmět:	Hardware_GENERAL ComputerSystemsOrganization_COMPUTER-COMMUNICATIONNETWORKS bulk acoustic wave resonator aluminum nitride
Zdroj:	Nurmela, A, Riekkinen, T, Pensala, T, Molarius, J & Ylilammi, M 2007, ' Aluminum nitride for thin film bulk acoustic wave resonators ', Paper presented at XLI Annual Conference of the Finnish Physical Society, Tallin, Estonia, 15/03/07-17/03/07 .
Popis:	We have developed a piezo electric aluminum nitride (AlN) deposition process which enables the manufacturing of bulk acoustic wave (BAW) resonators. The BAW devices may be used in numerous GHz frequency applications: Radio frequency filters in new mobile communication technologies eg.3g, umts, cdma and in present technologies like gsm, wlan and mlan, local clocks for computers and ultrawide band filters (UWB) and also for example actuators in micro-electric mechanical systems (MEMS).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=355e65625b88::bd15315ef0e577f4ef10d9171b7de3e2 https://cris.vtt.fi/en/publications/15ab8ee9-0858-474d-9f58-1081b5559e30 Zobrazit plný text záznamu