Comparison of Al0.51In0.49P and Ga0.51In0.49P window layers for GaAs and GaInAsP solar cells
| Autor: | Jaakkola, R., Lammasniemi, J., Kazantsev, A.B., Tappura, K. |
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| Jazyk: | angličtina |
| Rok vydání: | 1997 |
| Zdroj: | Jaakkola, R, Lammasniemi, J, Kazantsev, A B & Tappura, K 1997, Comparison of Al0.51In0.49P and Ga0.51In0.49P window layers for GaAs and GaInAsP solar cells . in Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference . IEEE Institute of Electrical and Electronic Engineers, pp. 891-894, 26th Photovoltaic Specialists Conference, Anaheim, United States, 29/09/97 . |
| Popis: | Two window layer materials, Al0.51In0.49P (Eg = 2.3 eV) and Ga0.51In0.49P (Eg = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga0.84In0.16As0.68P0.32 (Eg = 1.55 eV) solar cells. Due to the wider band-gap of Al0.51In0.49P, the increased spectral response was observed for both GaAs and Ga0.84In0.16As0.68P0.32 material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to Increase from 32.5 mA/cm2 to 34.4 mA/cm2 with the Al0.51In0.49P window layer at AM0. Similar improvement was observed for the Ga0.84In0.16As0.68P0.32 solar cells. |
| Databáze: | OpenAIRE |
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