Through-wafer polysilicon interconnect fabrication with in-situ boron doping
| Autor: | Luusua, Ismo, Henttinen, Kimmo, Pekko, Panu, Vehmas, Tapani, Luoto, Hannu |
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| Jazyk: | angličtina |
| Rok vydání: | 2005 |
| Předmět: | |
| Zdroj: | Luusua, I, Henttinen, K, Pekko, P, Vehmas, T & Luoto, H 2005, Through-wafer polysilicon interconnect fabrication with in-situ boron doping . in Symposium J-Micro-and Nanosystems-Materials and Devices ., J5.5, Materials Research Society, MRS Online Proceedings, vol. 872, pp. 77-81, 2005 MRS Spring Meeting, Symposium J: Micro-and Nanosystems-Materials and Devices, San Francisco, California, United States, 28/03/05 . https://doi.org/10.1557/PROC-872-J5.5 |
| DOI: | 10.1557/PROC-872-J5.5 |
| Popis: | Bulk micromachining technology can be used to produce conducting through-wafer polysilicon interconnects, i.e., polysilicon via plugs. This paper presents the process fabrication steps of polysilicon via plugs with in-situ boron doped polysilicon material in order to develop fast one-step doping process, without additional diffusion. The via holes can be processed by high-aspect ratio silicon etching with inductively coupled plasma (ICP). |
| Databáze: | OpenAIRE |
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