| Autor: |
Avrutskii, I.A., Dianov, E.M., Zvonkov, B.N., Zvonkov, N.B., Malkina, I.G., Maksimov, G.A., Uskova, E.A. |
| Zdroj: |
Quantum Electronics; February 28, 1997, Vol. 27 Issue: 2 p118-121, 4p |
| Abstrakt: |
Semiconductor lasers with a new planar waveguide structure were developed and investigated experimentally. The structure made it possible to reduce the width (by a factor of 1.7) of the angular distribution in a plane perpendicular to the p n junction and still retain a high value of the factor representing the optical confinement of waves in the waveguide. A single-lobe angular distribution in the same plane was achieved by a new method based on the difference between the optical confinement and optical loss factors for the fundamental and high-order transverse modes. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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