| Autor: |
Nalla, P., Huang, S.-H., Zhang, Y., Chyan, O., Richmond, M. G., Bouanani, M. El |
| Zdroj: |
Chemistry of Materials; November 2005, Vol. 17 Issue: 24 p5951-5956, 6p |
| Abstrakt: |
Near-UV irradiation of hydrogen-terminated Si(111) wafers with the ruthenium−ruthenium bonded dinuclear compounds Cp2Ru2(CO)4 (where Cp = η5-MeC5H4, η5−C5Me5) and [HB(pz)3]2Ru2(CO)4 [where HB(pz)3 = hydrotris(1-pyrazolyl)borate] in benzene solution at room temperature leads to the covalent attachment of CpRu(CO)2 and HB(pz)3Ru(CO)2 moieties to surface silicon sites on the wafer. ATR FTIR, XPS, and RBS data support the proposed Ru−Si bond formation as the dominant mode of wafer metallization. The surface area coverage of these ruthenized wafers is limited by the size the mononuclear ruthenium moiety that is attached to the Si anchor. A plausible reaction sequence involving the photochemically generated ruthenium-centered radicals CpRu(CO)2 and [HB(pz)3]Ru(CO)2 that both activate the hydrogen-terminated Si(111) surface and combine with the resulting silicon radicals is presented and discussed. |
| Databáze: |
Supplemental Index |
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