| Autor: |
Prokhorov, Vyacheslav V., Shvakov, D.S., Yakubovich, S.D. |
| Zdroj: |
Quantum Electronics; July 2005, Vol. 35 Issue: 6 p504-506, 3p |
| Abstrakt: |
It is shown experimentally that the use of a travelling-wave semiconductor optical amplifier (SOA) significantly improves the output characteristics of a superluminescent diode (SLD), increasing, in particular, its output power or broadening its emission band. By using SOAs based on separate-confinement double (InGa)PAs heterostructures emitting at 1300 nm and different SLDs as input radiation sources, there were obtained up to 50 mW of cw power at the output of a single-mode fibre and the emission band with the half-width up to 70 nm. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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