| Autor: |
Nadaud, N, Lequeux, N, Nanot, M, Jové, J, Roisnel, T |
| Zdroj: |
Journal of Solid State Chemistry; January 1998, Vol. 135 Issue: 1 p140-148, 9p |
| Abstrakt: |
Structural changes in the indium oxide lattice due to doping with Sn4+(ITO) were studied by Mössbauer spectroscopy, EXAFS, and neutron powder diffraction. There is a decrease in electrical conductivity as the tin content and oxygen partial pressure increase, which is related to a distortion in the first Sn–O shell. Doping with tin increases the oxygen/cation ratio and the lattice parameter and decreases the Sn–O distances, which disorders the host network. The low-conduction In4Sn3O12phase precipitates when the tin content exceeds 6 at.%. In4Sn3O12is rhombohedral (space groupR3,a=9.4604(2) Å, andc= 8.8584(2) Å in a hexagonal basis). There is a cation ordering with octahedral sites fully occupied by tin, the tin sites being equivalent in both highly doped ITO and In4Sn3O12. |
| Databáze: |
Supplemental Index |
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