| Autor: |
Hoffmann, P., Mikalo, R.P., Schmeisser, D., Kittler, M. |
| Zdroj: |
Physica Status Solidi (B) - Basic Solid State Physics; September 1999, Vol. 215 Issue: 1 p743-749, 7p |
| Abstrakt: |
A photo-emission electron microscope additionally equipped with an energy analyzer is used at the synchrotron to obtain near edge absorption and photoelectron spectra. The instrument is used to study the morphology and doping inhomogeneities of Si surfaces. We study surfaces of mc-Si and demonstrate that the morphology dependent surface potential around the grain boundaries of that surfaces can be studied without removing the natural oxide. The local oxide thickness as well as the distribution of contaminations are determined by recording the NEXAFS spectra within segments of the surface area investigated in the microscope. |
| Databáze: |
Supplemental Index |
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