| Autor: |
Gokarna, A., Bhoraskar, S.V., Pavaskar, N.R., Sathaye, S.D. |
| Zdroj: |
Physica Status Solidi (A) - Applications and Materials Science; November 2000, Vol. 182 Issue: 1 p175-179, 5p |
| Abstrakt: |
Ultra thin films of CdS and ZnS were deposited on porous silicon by using the liquid–liquid interface reaction technique (LLIRT) which was similar to the Langmuir Blodgett method. The photoluminescence (PL) intensity after deposition of CdS and ZnS was observed to increase by more than two factors and was associated with a blue shift. Junction I–V characteristics were studied for various thicknesses of the deposited films. The rectifiying behaviour of I–V characteristics indicates the formation of junctions with porous silicon. Hall measurements were used to estimate the extrinsic properties of the overlayers as well as those of porous silicon. The change in the I–V characteristics after annealing of the deposited samples is also reported. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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