| Autor: |
Scholz, F., Off, J., Fehrenbacher, E., Gfrörer, O., Brockt, G. |
| Zdroj: |
Physica Status Solidi (A) - Applications and Materials Science; July 2000, Vol. 180 Issue: 1 p315-320, 6p |
| Abstrakt: |
We studied the development of V-shaped defects in GaInN–GaN quantum well superlattices. We observed that these defects could not be suppressed by varying growth parameters like strain, In content, GaInN growth temperature etc. However, perfect superlattices without such defects could be grown by cycling the temperature between low (for the GaInN wells) and high temperatures (for the GaN barriers). Although a large hydrogen/nitrogen ratio in the carrier gas seems to hinder the defect formation in GaN–AlGaN superlattices, it was not possible to suppress the defect formation in a GaInN–GaN superlattice by decreasing the total nitrogen flow. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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