| Autor: |
Arushanov, E., Kaefer, W., Fess, K., Kloc, Ch., Friemelt, K., Bucher, E |
| Zdroj: |
Physica Status Solidi (A) - Applications and Materials Science; February 2000, Vol. 177 Issue: 2 p511-520, 10p |
| Abstrakt: |
Electrical measurements have been carried out on n-type ZrNiSn single crystals. The observed temperature dependence of the Hall coefficient is explained in assuming the existence of an impurity band. The values of the activation energy of the shallow donors, their concentration and the concentration of the compensating acceptors were calculated. It is shown that the scattering due to acoustic phonons and ionized impurities is most important in the high and low temperature region, respectively. The value of the conduction band deformation potential is estimated. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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