| Autor: |
Raichev, O.E., Vasko, F.T. |
| Zdroj: |
Superlattices and Microstructures; February 1998, Vol. 23 Issue: 2 p471-476, 6p |
| Abstrakt: |
A nonlinear regime of electron tunneling into double quantum wells with independent contacts to each well is investigated theoretically. The nonlinear current–voltage response in these systems takes place when the voltageVapplied to the contacts exceeds the tunneling resonance width. It is found that such a nonlinearity acquires essentially new features when the length of the tunneling area is comparable with the square root of the ratio of the averaged in-plane conductivity of the electrons to the resonance tunneling conductance. Under these conditions, the local interlayer voltagevdoes not coincide with Vand depends on the in-plane coordinate x. The local tunneling conductance also depends on xin the nonlinear regime. This dependence creates a positive feedback, which leads to a bistable behavior of the system (two stable patterns of the local voltage at a fixed V). The bistability is reflected by Z-like regions of the current–voltage characteristics. |
| Databáze: |
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| Externí odkaz: |
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