| Autor: |
Li, Wenbin, Han, Xiao, Jiang, Baichuan, Li, Jun, Ou, Cailing, Ji, Tingyu, Han, Zixiao, Dou, Nannan, Cao, Xiaoru, Zhang, Lei |
| Zdroj: |
ACS Nano; 20240101, Issue: Preprints |
| Abstrakt: |
As the keystones of molecular electronics, high-quality nanodielectric layers are challenging to assemble due to the strictest criteria for their reliability and uniformity over a large area. Here, we report a strained poly(4-vinylphenol) monolayer, ready to be stacked to form defect-free wafer-scale nanodielectrics. The thickness of the nanodielectrics can be precisely adjusted in integral multiples of the 1.2 nm thick PVP monolayer. By employing a double cross-linking strategy, an exceptional dielectric performance is achieved with a leakage current of 10–7–10–8A/cm2at 2 MV/cm across the low-kPVP layers as thin as 3.6 nm. Furthermore, the obtained nanodielectric layers could be laminated onto various substrates on demand via polydimethylsiloxane soft stamps, enabling its application in organic field-effect transistors of both bottom-gate and top-gate configurations. This work represents a pivotal development in (opto-)electronic molecular materials and heralds an emerging avenue for the exploration of functional nanodielectrics in the field of nanoelectronics. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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