| Autor: |
Chen, Ying-Chen, Lin, Chao-Cheng, Hou, Tuo-Hung, Chung, Chin-Han, Chang, Yao-Feng |
| Zdroj: |
IEEE Transactions on Electron Devices; December 2024, Vol. 71 Issue: 12 p7442-7446, 5p |
| Abstrakt: |
In this study, we have presented the radiation immunity of HfOx-based resistive switching devices that meet the requirement for qualified manufacturers list verification (QMLV) and radiation hardness assurance (RHA), which potentially support low-earth-orbit (LEO), medium-earth-orbit, and geosynchronous orbit missions. Specifically, the memory window of the postradiation devices is increased by $\sim 1.5\times $ when compared to preradiation devices, enabling the capability of the 1000-times endurance and 10-year retention by integrating ruthenium (Ru) as a photon-absorb sink to reduce the switching layer damage caused by overheating. These results presented that the optimized HfOx-based resistive switching memory is not only suitable for low-power consumption, high-density memory, and LEO applications but also provides a development path to realize programmable computing chip tolerance in harsh radiation environments. |
| Databáze: |
Supplemental Index |
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