| Autor: |
Song, Zhulu, Cao, Tao, Wang, Xiao, Tan, Yangzhi, Wu, Jiufeng, Wang, Zhaojin, Zhu, Haibo, Fang, Fan, Wu, Dan, Chen, Wei, Wang, Kai |
| Zdroj: |
IEEE Electron Device Letters; December 2024, Vol. 45 Issue: 12 p2455-2458, 4p |
| Abstrakt: |
Lead sulfide (PbS) quantum dot (QD) photodetectors have received intensive attention due to their great potential in short-wave infrared photodetection. The hole transport layer commonly employed in the PbS QD photodetector consists of passivated PbS QDs with 1,2-ethanedithiol (PbS-EDT). However, EDT causes a severe chemical erosion to the PbS QDs active layer (PbS-AL), which will hinder carrier extraction and increases dark current density. Here, we introduce a PbS QD photodetector modified with a polymer material PTQ10[(thiophene)-alt(6,7-difluoro-2-(2-hexyldecyloxy) quinoxaline)] as a buffer layer at the interface between the PbS-EDT and PbS-AL. The PTQ10 can provide protection for PbS-AL against EDT and facilitating carrier extraction. At a working voltage of −0.5 V, the optimized device with PTQ10 exhibits a low dark current density of 360 nA/cm2, a high detectivity of ${5}.{4}\times {10}^{{11}}$ Jones at 1080 nm, and a fast response time of 4.90/ $5.76~\mu $ s. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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