| Autor: |
Khan, Taslim, Arora, Kanika, Agarwal, Rekha, Muduli, Pranaba Kishor, Chu, Ying-Hao, Horng, Ray Hua, Singh, Rajendra |
| Zdroj: |
ACS Applied Materials & Interfaces; October 2024, Vol. 16 Issue: 42 p57290-57301, 12p |
| Abstrakt: |
This investigation presents a self-powered, solar-blind photodetector utilizing a low-temperature fabricated crystalline NiO/ZnGa2O4heterojunction with a staggered type-II band alignment. The device leverages the pyrophototronic effect (PPE), combining the photoelectric effect in the p–n junction and the pyroelectric effect in the non-centrosymmetric ZnGa2O4crystal. This synergistic effect enhances the photodetector’s performance parameters, thereby outperforming traditional solar-blind photodetectors. The device demonstrates an extremely low dark current of 5.39 fA, a high responsivity of 88 mA/W, and a very high specific detectivity of 2.03 × 1014Jones under 246 nm light irradiation at 0 V bias. Significantly, due to the PPE, the impact demonstrates a much-enhanced transient response when tested under various light intensities, ranging from 18 to 122 μW/cm2. The photodetector shows a high responsivity of 338 A/W and an outstanding detectivity of 7.1 × 1018Jones with an applied voltage of −13 V, showing its ability to detect weak signals. Single-crystalline ZnGa2O4fabricated by MOCVD exhibits significant absorption of deep UV light, and the heterojunction’s type-II band alignment with NiO is responsible for its exceptional self-powered pyrophotoelectric detecting and rectifying capabilities. |
| Databáze: |
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