| Autor: |
Alaluss, Mohamed, Böhm, Christoph, Herrmann, Clemens, Basler, Thomas, Elpelt, Rudolf, Zeng, Guang |
| Zdroj: |
Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 360 Issue: 1 p1-8, 8p |
| Abstrakt: |
The aim of this work is to investigate the 3rd quadrant safe operating area (SOA) of different voltage class SiC MOSFETs under surge current conditions depending on the gate-source voltage. The extent to which an applied gate-source voltage can influence the surge current capability was investigated. For 650 V and 1.2 kV voltage class devices, surge current capability was higher with channel-on mode. However, this behavior was vice-versa for 2 kV and 3.3 kV devices. In this investigation, during the surge current event, the gate-source voltage was switched between different values to optimize the resulting voltage drop. This method can reduce power dissipation during a surge current event, especially for high voltage class SiC MOSFETs. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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