| Autor: |
Hellinger, Carsten, Rommel, Mathias, Bauer, Anton J. |
| Zdroj: |
Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 359 Issue: 1 p113-118, 6p |
| Abstrakt: |
In this work, the influence of different surface roughness and surface treatments on the minimum energy density required to form low-ohmic nickel contacts on n-type 4H-SiC by laser annealing was investigated. The annealing was performed by a frequency-tripled Nd:YVO4 laser with a pulse duration of 50 ns. To evaluate the effects, the grinded or polished C-side of 4H-SiC wafers with surface roughness between 0.3 and 70 nm was sputter-deposited with nickel and subsequent laser annealed. Sheet resistance measurements showed that the minimum energy density required to achieve a low-resistance contact depends significantly on the surface roughness. The rougher the surface, the lower the minimum energy density to form a low-ohmic contact. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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