| Autor: |
Gelineau, Guillaume, Masante, Cédric, Rolland, Emmanuel, Barbet, Sophie, Corbin, Lucie, Papon, Anne-Marie, Caridroit, Simon, Delcroix, Mathieu, Huet, Stéphanie, Moulin, Alexandre, Prudkovskiy, Vladimir S., Troutot, Nicolas, Rouchier, Séverin, Turchetti, Loic, Mony, Karine, Widiez, Julie |
| Zdroj: |
Materials Science Forum; August 2024, Vol. 1124 Issue: 1 p57-65, 9p |
| Abstrakt: |
SiC-on-Insulator (SiCOI) structures fabricated using the Smart Cut™ technique can be of great interest in order to probe the properties of a silicon carbide (SiC) transferred layer, by electrically insulating it from the receiver substrate. In this study, we report the fabrication of such a SiCOI structure using a SiC receiver, as well as its electrical and TEM characterization after high temperature annealing. We highlight a decrease of the transferred layer electrical resistivity with increasing annealing temperature, due to doping reactivation and electron mobility enhancement. After low temperature annealing (1200°C to 1400°C), deep acceptor levels, possibly located in a damaged region near the substrate’s surface, might be responsible of a non negligible electrical compensation. Beyond 1400°C however, the transferred SiC crystal is healed and electron transport is only subjected to shallow nitrogen ionization. |
| Databáze: |
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