| Autor: |
Makhoul, Ralph, Beydoun, Nour, Bourennane, Abdelhakim, Phung, Luong Viet, Richardeau, Frédéric, Lazar, Mihai, Godignon, Philippe, Planson, Dominique, Morel, Hervé, Bourrier, David |
| Zdroj: |
Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 358 Issue: 1 p23-30, 8p |
| Abstrakt: |
New and original medium power multi-terminal SiC monolithic converter architectures are investigated with vertical switching cells based on SiC JBS diodes and VDMOS transistors. 2D TCAD and mixed-mode Sentaurus™ simulations are performed to optimize switching structures as Buck, Boost, H-bridge high-side row chip common drain-type and low-side row chip common source-type. The proper operation in the turn-on and turn-off of each cell is also studied and validated. To fabricate these new monolithic integrated architectures, two main technological bricks have been developed, for vertical insulation and the integration of a top Ni metal via. To achieve the vertical insulation deep trenches are necessary combining dry plasma and wet KOH electrochemical etching through the thick N+ substrate. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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