| Autor: |
Morita, Takuya, Matsushita, Yohsuke, Igarashi, Yasuyuki, Takano, Kazumi |
| Zdroj: |
Diffusion and Defect Data Part A: Defect and Diffusion Forum; August 2024, Vol. 434 Issue: 1 p33-38, 6p |
| Abstrakt: |
In this study, we investigated how bar-shaped 1SSF (Single Shockley-type stacking fault) in a chip of a SiC (Silicon Carbide) epitaxial wafer expanded with UV (ultraviolet) irradiation and observed it with PL (Photoluminescence) imaging and demonstrated early detection of bar-shaped 1SSF with an algorithm for automatic detection for the initial shape of bar-shaped 1SSF. Furthermore, we estimated that it was 83% how much UV irradiation time could be reduced. |
| Databáze: |
Supplemental Index |
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