| Autor: |
Wang, Rensheng, Li, Yongfeng, Jia, Sisi, Wang, Weifeng, Hu, Yuhang, Sun, Huanhuan, Meng, Xiuqing, Huang, Shihua, Song, Yanping, Zhu, Chengjun |
| Zdroj: |
ACS Applied Materials & Interfaces; September 2024, Vol. 16 Issue: 35 p46341-46350, 10p |
| Abstrakt: |
Realization of a high-quality back electrode interface (BEI) with suppressed recombination is crucial for Cu2ZnSn(S,Se)4(CZTSSe) solar cells. To achieve this goal, the construction of a traditional chemical passivation effect has been widely adopted and investigated. However, there is currently a lack of reports concerning the construction of a field passivation effect (FPE) for the BEI. Herein, considering the characteristic of the negligible difference in ionic radius between Mo (0.65 Å) and V (0.64 Å) as well as the presence of one less valence electron compared to Mo, vanadium (V) was employed and in situincorporated into the MoSe2interfacial layer during the deposition of the Mo:V electrode and selenization process. This allowed for the establishment of a desirable in situVI-FPE interface with p-MoSe2:V/p-CZTSSe at the BEI. The p-type characteristic in MoSe2:V is attributed to the presence of the VMoacceptor; notably, the Fermi energy level of MoSe2:V has shifted downward by 0.62 eV compared to MoSe2, thereby facilitating the formation of an optimized band alignment between MoSe2:V and the absorber. Consequently, the photovoltaic parameters of the cell-FPE have experienced a significant increase due to the enhanced carrier transportation efficiency compared to cell-ref, resulting in a remarkable improvement in efficiency from 8.28 to 11.11%. |
| Databáze: |
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