InGaAs/GaAsSb type-II quantum well photodetectors with quantum wells barrier layer for reducing dark current

Autor: Fulop, Gabor F., MacDougal, Michael H., Ting, David Z., Kimata, Masafumi, Tanaka, T., Gozu, S., Sano, M., Kanaori, M., Shibuya, T., Igarashi, Y., Oda, N., Yuge, R.
Zdroj: Proceedings of SPIE; June 2024, Vol. 13046 Issue: 1 p130461X-130461X-3, 1174153p
Databáze: Supplemental Index