GaN Schottky diode with composed trench MIS barrier and junction barrier

Autor: Zhang, Ke, Zhang, Dailin, Zhang, Boya, Hu, Dongqing, Zhou, Xintian, Wu, Yu, Jia, Yunpeng, Tang, Yun
Zdroj: Proceedings of SPIE; August 2024, Vol. 13226 Issue: 1 p132260Z-132260Z-6, 1190347p
Databáze: Supplemental Index