| Autor: |
Yim, Chi-Ming, Allan, Michael, Pang, Chi Lun, Thornton, Geoff |
| Zdroj: |
The Journal of Physical Chemistry - Part C; August 2024, Vol. 128 Issue: 33 p14100-14106, 7p |
| Abstrakt: |
Using scanning tunneling microscopy (STM), we investigate the spatial distribution of the bridging hydroxyl (OHb) bound excess electrons on the rutile TiO2(110) surface and its temperature dependence. By performing simultaneously recorded empty and filled state imaging on single OHbs at different temperatures in STM, we determine that the spatial distribution of the OHbbound excess electrons retains a symmetric four-lobe structure around the OHbat both 78 and 7 K. This indicates that OHbs are much weaker charge traps compared to bridging O vacancies (Ob-vac). In addition, by sequentially removing the capping H of each OHbusing voltage pulses, we find that the annihilation of each OHbis accompanied by the disappearance of some lobes in the filled state STM, thus verifying the direct correlation between OHbs and their excess electrons. |
| Databáze: |
Supplemental Index |
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