| Autor: |
Muranaka, Shuto, Horikawa, Naoto, Ishikawa, Ryousuke, Watanabe, Kenji, Taniguchi, Takashi, Hoshi, Yusuke |
| Zdroj: |
The Journal of Physical Chemistry - Part C; May 2024, Vol. 128 Issue: 17 p7211-7215, 5p |
| Abstrakt: |
We focus on the formation of hexagonal holes in WSe2and MoS2multilayers by anisotropic wet etching. It is found that anisotropic wet etching occurs for a high H2O2concentration in an etchant and large thicknesses of WSe2and MoS2. Furthermore, photoexcited carriers accelerate the anisotropic wet etching of the WSe2multilayers. It is found that the oxidation process at the edges of WSe2crystals significantly impacts anisotropic wet etching, and photoexcited carriers facilitate the WSe2oxidation reaction with H2O2. We also demonstrate that anisotropic wet etching can be used to determine the twist angle in WSe2/MoS2heterobilayers. The photoluminescence intensities of the infrared interlayer exciton are proportional to the twist angle in the heterobilayers. These results suggest the potential for exploiting the orientation-dependent phenomena of transition metal dichalcogenides. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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